HUFS AFM LAB

Welcome to the Advanced Functional Microscopy Laboratory!

We focus on understanding the electrical properties of two-dimensional (2D) materials, including transition metal dichalcogenides, graphene, and hexagonal boron nitride (h-BN), with particular emphasis on systems where local strain is introduced by bubble- and wrinkle-like structures. Our group develops and modifies advanced atomic force microscopy techniques to characterize how strain-induced changes in the energy band structure and charge-carrier distribution affect the local dielectric constant and gate-swept electrical response of 2D materials. Using these tools, we carry out nanoscale investigations of nonvolatile memory and neuromorphic devices based on 2D materials and directly probe strain-induced charge-trap states that govern their operation. Moreover, our advanced AFM modalities provide a versatile platform for mapping the electrical properties of a wide variety of nanoscale structures, enabling detailed diagnosis of 2D-material-based devices and guiding strategies to enhance their performance. 

Room 318, Natural Sciences Building, Hankuk University of Foreign Studies, Global Campus 81 Oedae-ro, Mohyeon-eup, Cheoin-gu, Yongin-si, Gyeonggi-do 17053 Republic of Korea 
TEL : 031-330-4264
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